Semiconductor device cleaning solution, method of use, and method of manufacture

ABSTRACT

A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.16/152,965, filed on Oct. 5, 2018, and entitled “Semiconductor DeviceCleaning Solution, Method of Use, and Method of Manufacture,” now U.S.Pat. No. 10,961,487, which claims the benefit of U.S. Provisional PatentApplication No. 62/592,891, filed on Nov. 30, 2017, and entitled“Semiconductor Device Cleaning Solution, Method of Use, and Method ofManufacture,” which patent application is incorporated herein byreference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as, for example, personal computers, cell phones, digital cameras,and other electronic equipment. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductor layers of material over asemiconductor substrate, and patterning the various material layersusing lithography and etching processes to form circuit components andelements thereon.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. However, asthe minimum features sizes are reduced, additional problems arise withineach of the processes that are used, and these additional problemsshould be addressed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates steps in a process of forming a finFET device inaccordance with some embodiments.

FIGS. 2A-2B illustrate formation of source/drain regions in accordancewith some embodiments.

FIG. 3 illustrates a formation of a first opening in accordance withsome embodiments.

FIG. 4 illustrates a formation of a first contact in accordance withsome embodiments.

FIG. 5 illustrates a chemical mechanical polishing (CMP) system inaccordance with some embodiments.

FIGS. 6A-6C illustrate a CMP process and result in accordance with someembodiments.

FIG. 7 illustrates an application of a CMP cleaning solution inaccordance with some embodiments.

FIGS. 8A-8D illustrate a cleaning process in accordance with someembodiments.

FIG. 9 illustrates an application of a rinsing liquid in accordance withsome embodiments.

FIG. 10 illustrates an application of a drying liquid in accordance withsome embodiments.

FIG. 11 illustrates a flow diagram of a method of cleaning a surface ofa substrate in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not dictate a relationship between the variousembodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

With reference now to FIG. 1 , there is illustrated a perspective viewof a semiconductor device 100. The semiconductor device 100 may be a finfield-effect transistor (FinFET) device. However, in other embodiments,the methods described below may be applied to planar field-effecttransistors (FETs), horizontal gate-all-around (HGAA) FETs, verticalgate-all-around (VGAA) FETs, or any other devices. In an embodiment, thesemiconductor device 100 comprises a substrate 101 with first trenches103 formed therein. The substrate 101 may be a silicon substrate,although other substrates, such as a semiconductor-on-insulator (SOI)substrate, a strained SOI substrate, a silicon germanium on insulatorsubstrate, or the like could be used. The substrate 101 may be a p-typesemiconductor, although in other embodiments, it could be an n-typesemiconductor.

The first trenches 103 may be formed as an initial step in the eventualformation of first isolation regions 105. The first trenches 103 may beformed using a masking layer (not separately illustrated) along with asuitable etching process. For example, the masking layer may be ahardmask comprising silicon nitride formed through a process such aschemical vapor deposition (CVD), although other materials, such asoxides, oxynitrides, silicon carbide, combinations of these, or thelike, and other processes, such as plasma enhanced chemical vapordeposition (PECVD), low pressure chemical vapor deposition (LPCVD), oreven silicon oxide formation followed by nitridation, may be utilized.Once formed, the masking layer may be patterned through a suitablephotolithographic process to expose those portions of the substrate 101that will be removed to form the first trenches 103.

As one of skill in the art will recognize, however, the processes andmaterials described above to form the masking layer are not the onlymethod that may be used to protect portions of the substrate 101 whileexposing other portions of the substrate 101 for the formation of thefirst trenches 103. Any suitable process, such as a depositing,patterning, and developing a photoresist on the substrate 101, may beutilized to cover portions of the substrate 101 and expose otherportions of the substrate 101 to be removed to form the first trenches103. All such methods are fully intended to be included in the scope ofthe present embodiments.

Once a masking layer has been formed and patterned, the first trenches103 are formed in the substrate 101. The exposed substrate 101 may beremoved through a suitable process such as reactive ion etching (RIE) inorder to form the first trenches 103 in the substrate 101, although anysuitable process may be used.

However, as one of ordinary skill in the art will recognize, the processdescribed above to form the first trenches 103 is merely one potentialprocess, and is not meant to be the only embodiment. Rather, anysuitable process through which the first trenches 103 may be formed maybe utilized and any suitable process, including any number of maskingand removal steps may be used.

In addition to forming the first trenches 103, the masking and etchingprocess forms fins 107 from those portions of the substrate 101 thatremain unremoved. For convenience, the fins 107 have been illustrated inthe figures as being separated from the substrate 101 by a dashed line,although a physical indication of the separation may or may not bepresent. These fins 107 may be used, as discussed below, to form channelregions of subsequently formed multiple-gate FinFET transistors. WhileFIG. 1 only illustrates three fins 107 formed from the substrate 101,any number of fins 107 may be utilized. The fins 107 may be spaced apartfrom one another such that each of the fins 107 forms a separate channelregion, while still being close enough to share a common gate (discussedfurther below).

Once the first trenches 103 and the fins 107 have been formed, the firsttrenches 103 may be filled with a dielectric material and the dielectricmaterial may be recessed within the first trenches 103 to form the firstisolation regions 105. The dielectric material may be an oxide material,a high-density plasma (HDP) oxide, or the like. The dielectric materialmay be formed, after an optional cleaning and lining of the firsttrenches 103, using either a chemical vapor deposition (CVD) method(e.g., the HARP process), a high density plasma CVD method, or any othersuitable method of formation as is known in the art.

The first isolation regions 105 may be formed by overfilling the firsttrenches 103 and the substrate 101 with the dielectric material and thenremoving the excess material outside of the first trenches 103 and thefins 107 through a suitable process such as chemical mechanicalpolishing (CMP), an etch, a combination of these, or the like. In anembodiment, the removal process removes any dielectric material that islocated over the fins 107 as well, so that the removal of the dielectricmaterial will expose the surface of the fins 107 to further processingsteps.

After the first isolation regions 105 are formed, the dielectricmaterial in the first isolation regions 105 may be recessed away fromthe top surfaces of the fins 107. The recessing may be performed toexpose at least a portion of the sidewalls of the fins 107 adjacent thetop surfaces of the fins 107. The dielectric material may be recessedusing a wet etch by dipping the top surfaces of the fins 107 into anetchant such as HF, although other etchants, such as H₂, and othermethods, such as a reactive ion etch, a dry etch with etchants such asNH₃/NF₃, a chemical oxide removal, a dry chemical clean, or the like maybe used. The recessing may remove any leftover dielectric materiallocated over the fins 107 to ensure that the fins 107 are exposed forfurther processing.

As one of ordinary skill in the art will recognize, however, the stepsdescribed above may be only part of the overall process flow used tofill and recess the dielectric material. For example, lining steps,cleaning steps, annealing steps, gap-filling steps, combinations ofthese, or the like may also be utilized to form and fill the firsttrenches 103 with the dielectric material. All of the potential processsteps are fully intended to be included within the scope of the presentembodiment.

After the first isolation regions 105 have been formed, dummy gatedielectrics 109 are formed over the first isolation regions 105 and thefins 107, dummy gate electrodes 111 are formed over the dummy gatedielectrics 109, and first spacers 113 are formed on sidewalls of thedummy gate dielectrics 109 and the dummy gate electrodes 111. In anembodiment, the dummy gate dielectrics 109 may be formed by thermaloxidation, chemical vapor deposition (CVD), sputtering, or any othermethods known and used in the art for forming a gate dielectric.Depending on the technique used to form the dummy gate dielectrics 109,the thickness of the dummy gate dielectrics 109 formed on top surfacesof the fins 107 may differ from the thickness of the dummy gatedielectrics 109 formed on sidewalls of the fins 107.

The dummy gate dielectrics 109 may comprise a material such as silicondioxide or silicon oxynitride. The dummy gate dielectrics 109 may beformed from a high permittivity (high-k) material (e.g., with a relativepermittivity greater than about 5) such as lanthanum oxide (La₂O₃),aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), hafnium oxynitride (HfON),zirconium oxide (ZrO₂), combinations thereof, or the like. Additionally,any combination of silicon dioxide, silicon oxynitride, and/or high-kmaterials may also be used for the dummy gate dielectrics 109.

The dummy gate electrodes 111 may comprise a conductive material and maybe selected from a group comprising of W, Al, Cu, AlCu, Ti, TiAlN, TaC,TaCN, TaSiN, Mn, Zr, TiN, Ta, TaN, Co, Ni, combinations of these, or thelike. The dummy gate electrodes 111 may be deposited by chemical vapordeposition (CVD), sputter deposition, or other techniques known and usedin the art for depositing conductive materials. The dummy gateelectrodes 111 may have non-planar top surfaces as deposited, and may beplanarized prior to patterning the dummy gate electrodes 111 or prior toperforming a gate etch. Ions may or may not be introduced into the dummygate electrodes 111. Ions may be introduced, for example, by ionimplantation techniques.

Once formed, the dummy gate dielectrics 109 and the dummy gateelectrodes 111 may be patterned to form a series of dummy gate stacks115 over the fins 107. The dummy gate stacks 115 define multiple channelregions located on each side of the fins 107 beneath the dummy gatedielectrics 109. The dummy gate stacks 115 may be formed by depositingand patterning a gate mask (not separately illustrated) on the dummygate electrodes 111 using, for example, deposition and photolithographytechniques known in the art. The gate mask may incorporate commonly usedmasking and sacrificial materials, such as (but not limited to) siliconoxide, silicon oxynitride, SiCON, SiC, SiOC, and/or silicon nitride. Thedummy gate electrodes 111 and the dummy gate dielectrics 109 may beetched using a dry etching process to form the patterned dummy gatestacks 115.

Once the dummy gate stacks 115 have been patterned, the first spacers113 may be formed. The first spacers 113 may be formed on opposing sidesof the dummy gate stacks 115. The first spacers 113 are typically formedby blanket depositing a spacer layer (not separately illustrated in FIG.1 ) on the previously formed structure. The spacer layer may compriseSiN, oxynitride, SiC, SiON, SiOCN, SiOC, oxide, or the like and may beformed by methods utilized to form such a layer, such as chemical vapordeposition (CVD), plasma enhanced CVD, sputter deposition, and othermethods known in the art. The spacer layer may comprise a differentmaterial with different etch characteristics or the same material as thedielectric material within the first isolation regions 105. The spacerlayer may then be patterned, such as by one or more etches to remove thespacer layer from the horizontal surfaces of the structure, forming thefirst spacers 113.

FIGS. 2A-2B illustrate a removal of the fins 107 from those areas notprotected by the dummy gate stacks 115 and the first spacers 113 and agrowth of source/drain regions 201 (with FIG. 2B illustrating across-sectional view of FIG. 2A along line B-B′). The removal of thefins 107 from those areas not protected by the dummy gate stacks 115 andthe first spacers 113 may be performed by a reactive ion etch (RIE)using the dummy gate stacks 115 and the first spacers 113 as hard masks,or by any other suitable removal process. The removal may be continueduntil the fins 107 are planar with top surfaces of the first isolationregions 105 or recessed below the top surfaces of the first isolationregions 105.

The source/drain regions 201 may then be grown on the fins 107. Thesource/drain regions 201 may be grown to form stressors that will impartstress into the channel regions of the fins 107 located underneath thedummy gate stacks 115. In an embodiment, wherein the fins 107 includesilicon and the FinFET is a p-type device, the source/drain regions 201may be regrown through a selective epitaxial process with a materialsuch as silicon or silicon germanium that has a different latticeconstant than the channel regions. The epitaxial growth process may useprecursors such as silane, dichlorosilane, germane, and the like, andmay continue for between about 5 minutes and about 120 minutes, such asabout 30 minutes. In other embodiments, the source/drain regions 201 maycomprise materials such as GaAs, GaP, GaN, InP, InAs, InSb, GaAsP,AlGaN, AlInAs, AlGaAs, GaInAs, GaInP, GaInAsP, combinations thereof, orthe like.

Once the source/drain regions 201 are formed, dopants may be implantedinto the source/drain regions 201 by implanting appropriate dopants tocomplement the dopants in the fins 107. For example, p-type dopants suchas boron, gallium, indium, or the like may be implanted to form a PMOSdevice. According to various embodiments, n-type dopants such asphosphorous, arsenic, antimony, or the like may be implanted to form anNMOS device. These dopants may be implanted using the dummy gate stacks115 and the first spacers 113 as masks. It should be noted that one ofordinary skill in the art will realize that many other processes, steps,or the like may be used to implant the dopants. For example, one ofordinary skill in the art will realize that a plurality of implants maybe performed using various combinations of spacers and liners to formsource/drain regions having a specific shape or characteristic suitablefor a particular purpose. Any of these processes may be used to implantthe dopants, and the above description is not meant to limit the presentembodiments to the steps presented above.

FIG. 2A also illustrates a formation of an inter-layer dielectric (ILD)layer 203 (illustrated in dashed lines in FIG. 2A to illustrate theunderlying structures) over the dummy gate stacks 115 and thesource/drain regions 201. The ILD layer 203 may include silicon dioxide,a low-k dielectric material, such as silicon oxynitride, phosphosilicateglass (PSG), borosilicate glass (BSG), borophosphosilicate glass (BPSG),undoped silicate glass (USG), fluorinated silicate glass (FSG),organosilicate glasses (OSG), SiO_(x)C_(y), Spin-On-Glass,Spin-On-Polymers, silicon carbon material, a compound thereof, acomposite thereof, the like, or a combination thereof. The ILD layer 203may be formed using a process such as PECVD, although other processes,such as LPCVD, may be used. Once formed, the ILD layer 203 may beplanarized with the first spacers 113 using, e.g., a planarizationprocess such as chemical mechanical polishing, although any suitableprocess may be utilized.

After the formation of the ILD layer 203, the material of the dummy gateelectrodes 111 and the dummy gate dielectrics 109 may be removed andreplaced to form gate stacks 205. In an embodiment, the dummy gateelectrodes 111 may be removed using, e.g., a wet or dry etching processthat utilizes etchants that are selective to the material of the dummygate electrodes 111. However, any suitable removal process may beutilized.

Once the dummy gate electrodes 111 have been removed, the openings leftbehind may be refilled to form the gate stacks 205. In a particularembodiment, the gate stacks 205 include first dielectric material 211,first metal material 213, second metal material 215, and third metalmaterial 217. In an embodiment, the first dielectric material 211 is ahigh-k material such as HfO₂, HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, LaO,ZrO, Ta₂O₅, combinations of these, or the like, deposited through aprocess such as atomic layer deposition, chemical vapor deposition, orthe like.

The first metal material 213 may be formed adjacent to the firstdielectric material 211 and may be formed from a metallic material suchas Ti, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, TiN, TaN, Ru, Mo, WN, othermetal oxides, metal nitrides, metal silicates, transition metal-oxides,transition metal-nitrides, transition metal-silicates, oxynitrides ofmetals, metal aluminates, zirconium silicate, zirconium aluminate,combinations of these, or the like. The first metal material 213 may bereferred to as a first work function layer. The first metal material 213may be deposited using a deposition process such as atomic layerdeposition, chemical vapor deposition, sputtering, or the like, althoughany suitable deposition process may be used.

The second metal material 215 may be formed adjacent to the first metalmaterial 213 and, in a particular embodiment, may be similar to thefirst metal material 213. For example, the second metal material 215 maybe formed from a metallic material such as Ti, TiAlN, TaC, TaCN, TaSiN,Mn, Zr, TiN, TaN, Ru, Mo, WN, other metal oxides, metal nitrides, metalsilicates, transition metal-oxides, transition metal-nitrides,transition metal-silicates, oxynitrides of metals, metal aluminates,zirconium silicate, zirconium aluminate, combinations of these, or thelike. The second metal material 215 may be referred to as a second workfunction layer. Additionally, the second metal material 215 may bedeposited using a deposition process such as atomic layer deposition,chemical vapor deposition, sputtering, or the like, although anysuitable deposition process may be used.

In the above embodiments, the gate stacks 205 include two work functionlayers (e.g., the first metal material 213 and the second metal material215); however, the disclosure is not limited thereto. In someembodiments, the gate stacks 205 may include one work function layer, ormore than two work function layers. For NMOS devices, the first metalmaterial 213 and the second metal material 215 may include Ti, Ag, Al,TiAlMo, Ta, TaN, TiAlC, TiAlN, TaC, TaCN, TiAl, TaSiN, Mn, Zr, orcombinations thereof. For PMOS devices, the first metal material 213 andthe second metal material 215 may include TiN, W, Ta, Ni, Pt, Ru, Mo,Al, WN, or combinations thereof.

The third metal material 217 fills a remainder of the openings leftbehind by the removal of the dummy gate electrodes 111. In anembodiment, the third metal material 217 is a metallic material such asW, Al, Cu, AlCu, Ti, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, TiN, Ta, TaN, Co,Ni, combinations of these, or the like, and may be deposited using adeposition process such as atomic layer deposition, chemical vapordeposition, sputtering, or the like to fill and/or overfill the openingsleft behind by the removal of the dummy gate electrodes 111. Anysuitable material and deposition process may be used for the third metalmaterial 217.

Once the openings left behind by the removal of the dummy gateelectrodes 111 have been filled, the materials may be planarized inorder to remove any material that is outside of the openings left behindby the removal of the dummy gate electrodes 111. In a particularembodiment, the removal may be performed using a planarization processsuch as chemical mechanical polishing. However, any suitableplanarization and removal process may be utilized.

After the materials of the gate stacks 205 have been formed andplanarized, the materials of the gate stacks 205 may be recessed andcapped with a capping layer 221. In an embodiment, the materials of thegate stacks 205 may be recessed using, e.g., a wet or dry etchingprocess that utilizes etchants selective to the materials of the gatestacks 205; however, any suitable process may be used to etch the gatestacks 205.

Once the materials of the gate stacks 205 have been recessed, thecapping layer 221 may be deposited and planarized along with the firstspacers 113. In an embodiment, the capping layer 221 is a material suchas SiN, SiON, SiCON, SiC, SiOC, combinations of these, or the like,deposited using a deposition process such as atomic layer deposition,chemical vapor deposition, sputtering, or the like. The capping layer221 may be deposited and then planarized using a planarization processsuch as chemical mechanical polishing (CMP) such that the capping layer221 is planar with the first spacers 113.

FIG. 3 illustrates a formation of a first opening 305 through the ILDlayer 203 in order to expose the source/drain regions 201 in preparationfor formation of a first contact 401 (not illustrated in FIG. 3 butillustrated and described below with respect to FIG. 4 ). Additionally,for convenience, the gate stack 205 is illustrated in a simplified formwithout showing the additional layers. In an embodiment, the firstopening 305 may be formed by initially placing and patterning a hardmask301 over the source/drain regions 201. In an embodiment, the hardmask301 may be a dielectric material such as silicon nitride, although anysuitable masking material may be utilized.

Once the hardmask 301 has been placed, the hardmask 301 is patterned. Inan embodiment, hardmask 301 may be patterned by depositing and thenexposing a photosensitive material onto the hardmask 301. The impact ofthe energy will cause a chemical reaction in those parts of thephotosensitive material that were impacted by the patterned energysource, thereby modifying the physical properties of the exposedportions of the photoresist such that the physical properties of theexposed portions of the photosensitive material are different from thephysical properties of the unexposed portions of the photosensitivematerial. The photosensitive material may then be developed with, e.g.,a developer (not separately illustrated), in order to separate theexposed portion of the photosensitive material from the unexposedportion of the photosensitive material, and then the hardmask 301 may bepatterned using an anisotropic etch and the photosensitive material as amask.

Once the hardmask 301 has been patterned, the first opening 305 may beformed using the hardmask 301 as a mask. In an embodiment, the firstopening 305 may be formed using a first etching process 303 (representedin FIG. 3 by a wavy line), which may be an anisotropic etching processsuch as a reactive ion etch process. However, any suitable process, suchas a wet etching process, and any suitable reactants may be used. Asillustrated in FIG. 3 , the first opening 305 may expose an uppersurface of the source/drain region 201. In other embodiments, the firstopening 305 may extend at least partially into the source/drain region201, such that the upper surface of the source/drain region 201 isrecessed. As further illustrated in FIG. 3 , the first opening 305 mayhave a first width at a point adjacent to an upper surface of the ILDlayer 203 and a second width at a point adjacent the bottom surface ofthe ILD layer 203, wherein the first width is greater than the secondwidth.

Once the first opening 305 has been formed, the hardmask 301 may beremoved. In an embodiment, the hardmask 301 may be removed using, e.g.,a wet or dry etching process that uses an etchant selective to thematerial of the hardmask 301. However, any suitable removal process mayalso be utilized.

FIG. 4 illustrates a formation of the first contact 401. Optionally,prior to formation of the first contact 401, a silicide contact (notseparately illustrated) may be formed. The silicide contact may includetitanium, nickel, cobalt, or erbium in order to reduce the Schottkybarrier height of the contact. However, other metals, such as platinum,palladium, and the like, may also be used. The silicidation may beperformed by blanket deposition of an appropriate metal layer, followedby an annealing step, which causes the metal to react with theunderlying exposed silicon. Unreacted metal is then removed, such aswith a selective etch process.

In an embodiment, the first contact 401 may be a conductive materialsuch as Co, W, Al, Cu, Ti, Ta, Ru, TiN, TiAl, TiAlN, TaN, TaC, NiSi,CoSi, combinations of these, or the like, although any suitable materialmay be deposited into the first opening 305 using a deposition processsuch as sputtering, chemical vapor deposition, electroplating,electroless plating, or the like, to fill and/or overfill the firstopening 305 formed by the first etching process 303. Once filled oroverfilled, any deposited material outside of the first opening 305formed by the first etching process 303 may be removed using aplanarization process such as chemical mechanical polishing (CMP).However, any suitable material and process of formation may be utilized.

FIG. 5 illustrates a CMP system 500, which may be used to remove theexcess conductive material of the first contact 401 from the surface ofthe capping layer 221 and the first spacers 113, thereby isolating thefirst contact 401 in the first opening 305. The CMP system 500 mayinclude loadlocks 501 and one or more platens 503. The loadlocks 501 maybe used for loading the substrate 101 into the CMP system 500, and thenunloading the substrate 101 once the CMP process has been completed. Theplatens 503 may be used for polishing and removing the conductivematerial of the first contact 401 in one or more steps.

FIGS. 6A-6C illustrate a CMP process 600 and the result of the CMPprocess 600. In an embodiment, the substrate 101 (along with theoverfilled conductive material of the first contact 401) may be loadedinto the CMP system 500 through the loadlocks 501 and passed to theplatens 503 for a removal of the conductive material of the firstcontact 401 (see FIG. 5 ). Once at the platens 503 (and as illustratedin FIG. 6A), the substrate 101 may be connected to a first carrier 601,which faces the substrate 101 and the first contact 401 towards a firstpolishing pad 603 connected to one of the platens 503.

The first polishing pad 603 may be a hard polishing pad that may beutilized for a relatively quick removal of the conductive material ofthe first contact 401. In an embodiment, the first polishing pad 603 maybe a single layer or composite layer of materials such as polyurethaneor polyurethane mixed with fillers, and may have a hardness of about 50or greater on the Shore D Hardness scale. The surface of the firstpolishing pad 603 may be a roughened surface with micropores within it.However, any other suitable polishing pad may be used to remove theconductive material of the first contact 401 from the surface of thecapping layer 221 and the first spacers 113 (as illustrated in FIG. 6B).

During the CMP process 600 the first carrier 601 may press the surfaceof the first contact 401 against the first polishing pad 603. Thesubstrate 101 and the first polishing pad 603 are each rotated againsteach other, either in the same direction or else counter-rotated inopposite directions. By rotating the first polishing pad 603 and thesubstrate 101 against each other, the first polishing pad 603mechanically grinds away the conductive material of the first contact401, thereby effectuating a removal of the conductive material of thefirst contact 401. Additionally, in some embodiments the first carrier601 may move the substrate 101 back and forth along a radius of thefirst polishing pad 603.

Additionally, the mechanical grinding of the first polishing pad 603 maybe assisted by use of a CMP slurry 605, which may be dispensed onto thefirst polishing pad 603 through a slurry dispensing system 607. In anembodiment, the CMP slurry 605 may comprise a first reactant, a firstinhibitor (e.g., a CMP inhibitor), an abrasive, a first surfactant, anda first solvent. The first reactant may be a chemical that willchemically react with the conductive material of the first contact 401in order to assist the first polishing pad 603 in grinding away theconductive material of the first contact 401, such as an oxidizer. Thefirst reactant may be hydrogen peroxide, although any other suitablereactant, such as hydroxylamine, periodic acid, ammonium persulfate,other periodates, iodates, peroxomonosulfates, peroxymonosulfuric acid,perborates, malonamide, combinations of these, and the like, that willaid in the removal of the conductive material of the first contact 401may be utilized.

The first inhibitor may be any suitable chemical that will help toprevent corrosion or excess etching of the conductive material of thefirst contact 401 in order to enhance CMP performance (e.g., preventdishing). In an embodiment, the first inhibitor may include phosphoricesters, sulfuric esters, tetrazoles, diazoles, triazoles, combinationsof these, or the like. However, these embodiments are not intended to belimited to these inhibitors, as any suitable inhibitor may be utilizedas the first inhibitor.

The abrasive may be any suitable particulate that, in conjunction withthe first polishing pad 603, aids in the removal of the conductivematerial of the first contact 401. In an embodiment, the abrasive may besilica (e.g., silicon oxide) with a particle size of between about 0.1μm and about 150 nm. However, any other suitable abrasive, such asaluminum oxide, cerium oxide, polycrystalline diamond, polymer particlessuch as polymethacrylate or polymethacryclic, combinations of these, orthe like, may be utilized and are fully intended to be included withinthe scope of the embodiments.

The first surfactant may be utilized to help disperse the first reactantand abrasive within the CMP slurry 605 and prevent the abrasive fromagglomerating during the CMP process. In an embodiment, the firstsurfactant may include sodium salts of polyacrylic acid, potassiumoleate, sulfosuccinates, sulfosuccinate derivatives, sulfonated amines,sulfonated amides, sulfates of alcohols, alkylanyl sulfonates,carboxylated alcohols, alkylamino propionic acids, alkyliminodipropionicacids, potassium oleate, sulfosuccinates, sulfosuccinate derivatives,sulfates of alcohols, alkylanyl sulfonates, carboxylated alcohols,sulfonated amines, sulfonated amides, alkylamino propionic acids,alkyliminodipropionic acids, combinations of these, or the like.However, these embodiments are not intended to be limited to thesesurfactants, as any suitable surfactant may be utilized as the firstsurfactant.

The remainder of the CMP slurry 605 may be a first solvent that may beutilized to combine the first reactant, the first inhibitor, theabrasive, and the first surfactant and allow the mixture to be moved anddispersed onto the first polishing pad 603. In an embodiment, the firstsolvent of the CMP slurry 605 may be a solvent such as deionized wateror an alcohol. However, any other suitable solvent may be utilized.

Once combined, the CMP slurry 605 may be dispensed onto the firstpolishing pad 603 by the slurry dispensing system 607 in order to assistin the removal of the conductive material of the first contact 401. Thefirst reactant may react with the material of the first contact 401 toform a sacrificial oxide layer including the material of the firstcontact 401 (not shown) along the exposed surface of the conductivematerial of the first contact 401. The sacrificial oxide layer may thenbe removed by the grinding effect of the first polishing pad 603 alongwith the assistance of the abrasives within the CMP slurry 605. Usingthis process, a removal of the conductive material of the first contact401 may be performed, and may be continued until the conductive materialof the first contact 401 is removed from the upper surface of thecapping layer 221 and the first spacers 113, and the capping layer 221and the first spacers 113 are exposed.

Following the CMP process 600, the CMP slurry 605 may be removed fromthe top surface of the substrate 101. For example, the CMP slurry 605may be removed from the surface of the substrate 101 by ceasingdispensing of the CMP slurry 605 from the slurry dispensing system 607while the first carrier 601 continues to rotate the substrate 101.

FIG. 6B illustrates the result of the CMP process 600. As illustrated,the CMP process 600 removes the conductive material of the first contact401 from the surface of the capping layer 221 and the first spacers 113,and the first contact 401 is isolated within the first opening 305.However, as one of ordinary skill in the art will recognize, the abovedescription of a removing of the excess conductive material of the firstcontact 401 outside of the first opening 305 in a single processing stepis merely an illustrative example and is not intended to be limitingupon the embodiments. Any number of removal processes and any number ofplatens may be utilized to remove the conductive material of the firstcontact 401, such as a bulk CMP process on a first platen, a fine CMPprocess on a second platen, and a buffing CMP process on a third platen,and all such combinations are fully intended to be included within thescope of the embodiments.

FIG. 6C (although not to scale) illustrates an enlarged view of thesurface of the first contact 401 following the CMP process 600. Asillustrated, following the CMP process 600, a plurality of individualinhibitor molecules 615 of the first inhibitor may be left on thesurface of the first contact 401. The first contact 401 includes aplurality of conductive material atoms 613 disposed at an outermostsurface of the first contact 401 and a bulk conductive material 611making up the remainder of the first contact 401. The inhibitormolecules 615 are bonded or otherwise attached to the plurality ofconductive material atoms 613, while the conductive material atoms 613are bonded to the bulk conductive material 611.

Following the CMP process 600, the inhibitor molecules 615 may causevarious problems in subsequent processing systems if they are notremoved or are incompletely removed from the surface of the firstcontact 401. For example, the inhibitor molecules 615 may affect thewettability and cleanability of the first contact 401, may interferewith subsequent steps (e.g., chemical vapor deposition), may providepoor adhesion to deposited layers, or the like.

FIG. 7 illustrates an application of a CMP cleaning solution 701 on thetop surface of the substrate 101. The CMP cleaning solution 701 may beused in a cleaning process to clean the surface of the substrate 101.More specifically, the CMP cleaning solution 701 may be used to removethe inhibitor molecules 615 and any other residue from the CMP process600 from the surface of the first contact 401.

The CMP cleaning solution 701 may be applied to the top surface of thesubstrate 101. More specifically, the CMP cleaning solution 701 may beapplied on the top surfaces of the first contact 401, the first spacers113, and the capping layer 221. The CMP cleaning solution 701 may beapplied through a nozzle in a spin-on process; although any suitableapplication, such as a brush, a sponge, a pencil brush, combinations ofthese, or the like may be used. The CMP cleaning solution 701 may beapplied continuously throughout the cleaning process, or may be appliedintermittently. The CMP cleaning solution may be applied at a flow rateof between about 0 ml/min and about 2500 ml/min, such as about 1500ml/min.

During the cleaning process, the top surface of the substrate 101 may bescrubbed by a scrubber (not separately illustrated). The scrubber may bea brush, a sponge, a pencil brush, combinations thereof, or the like.The substrate 101 and the scrubber may each be rotated against eachother, either in the same direction or else counter-rotated in oppositedirections. By rotating the scrubber and the substrate 101 against eachother, the scrubber mechanically cleans away residue from the CMP slurry605 left on the surface of the first contact 401, thereby helping toeffectuate a cleaning of the first contact 401. The cleaning process maybe performed at a temperature of between about 10° C. and about 35° C.,such as about 25° C. The cleaning process may be continuous orintermittent, and may continue for about 30 seconds, about 60 seconds,less than a minute, or any other time.

The CMP cleaning solution 701 may comprise a plurality of chelatormolecules 805, a plurality of carrier molecules 803, a second inhibitor,a second surfactant, and a second solvent. The chelator molecules 805are used to remove the conductive material atoms 613 and the inhibitormolecules 615 from the surface of the bulk conductive material 611. Forexample, the chelator molecules 805 may attack the conductive materialatoms 613 and bond to the conductive material atoms 613 to remove theconductive material atoms 613 and the inhibitor molecules 615 from thesurface of the bulk conductive material 611.

In an embodiment, the chelator molecules 805 may comprise histidine,aspartic acid, and glycine, combinations of these, or the like. Thechelator molecules 805 may comprise about 2 percent by weight or lessthan about 2 percent by weight of the CMP cleaning solution 701. Theseembodiments are not intended to be limited to these chelator molecules,as any suitable chelator molecules may be utilized as the chelatormolecules 805.

The plurality of carrier molecules 803 are used to prevent the inhibitormolecules 615 from re-bonding or otherwise re-attaching to the surfaceof the bulk conductive material 611 once the inhibitor molecules 615have been removed from the surface of the bulk conductive material 611by the chelator molecules 805. The carrier molecules 803 may be referredto as ring-shaped molecules, a host, or an encapsulant. The carriermolecules 803 may form host-guest complexes with the inhibitor molecules615 or encapsulate the inhibitor molecules 615 such that the inhibitormolecules 615 are solubilized in the cleaning solution 701.

The carrier molecules 803 may include at least one ring and may bering-shaped molecules. The exterior and an interior cavity of thecarrier molecules 803 may have different hydrophilicities. For example,in some embodiments, the exterior of the carrier molecules 803 may behydrophilic and the interior cavity may be less hydrophilic. In someother embodiments, the exterior of the carrier molecules 803 may behydrophilic and the interior cavity may be hydrophobic. Thus theinhibitor molecules 615, which may be hydrophobic, may be bonded with,physically adsorbed on, or otherwise encapsulated within the interiorcavity of the carrier molecules 803, while the exterior of the complexof the carrier molecules 803 and the inhibitor molecules 615 remainswater-soluble.

According to various embodiments, the carrier molecules 803 may beselected based on the size of the inhibitor molecules 615. For example,the carrier molecules 803 may be selected such that the size of theinterior cavity corresponds to the size of the inhibitor molecules 615.

Accordingly, in an embodiment in which the inhibitor molecules 615comprise phosphoric esters, the carrier molecules 803 may comprisecyclodextrines, cucurbiturils, calixarenes, pillararenes, combinationsof these, or the like. According to an embodiment, the carrier molecules803 may comprise α-cyclodextrin (e.g., a 6-membered cyclodextrinmolecule), β-cyclodextrin (e.g., a 7-membered cyclodextrin molecule),γ-cyclodextrin (e.g., a 8-membered cyclodextrin molecule), combinationsthereof, or the like.

α-cyclodextrin, β-cyclodextrin, and γ-cyclodextrin each havedifferent-sized interior cavities. Thus, in various embodiments, thecleaning solution 701 may comprise any combination of α-cyclodextrin,β-cyclodextrin, and γ-cyclodextrin depending on the size of theinhibitor molecules 615 present in the CMP slurry 605. For example, thecleaning solution 701 may comprise between 0 and about 5 weight percentα-cyclodextrin, such as about 1 weight percent α-cyclodextrin; between 0and about 5 weight percent β-cyclodextrin, such as about 1 weightpercent β-cyclodextrin; and between 0 and about 5 weight percentγ-cyclodextrin, such as about 1 weight percent γ-cyclodextrin. However,any suitable combination may be utilized.

The carrier molecules 803 may comprise less than about 10 percent byweight of the CMP cleaning solution 701. For example, the carriermolecules 803 may comprise about 1 percent by weight of the CMP cleaningsolution 701. These embodiments are not intended to be limited to thesecarrier molecules, as any suitable carrier molecule may be utilized asthe plurality of carrier molecules 803.

The second inhibitor is an inhibitor different from the first inhibitor.The second inhibitor may be any suitable chemical that will prevent theinhibitor molecules 615 removed from the surface of the bulk conductivematerial 611 by the chelator molecules 805 from aggregating andredepositing on the surface of the bulk conductive material 611.Molecules of the second inhibitor may bond with molecules of theinhibitor molecules 615 removed from the surface of the bulk conductivematerial 611, thereby disrupting pi-pi interactions between theinhibitor molecules 615 and the molecules of the bulk conductivematerial 611. In an embodiment, the second inhibitor may comprisebenzotriazole, aniline, and pyridine, combinations of these, or thelike.

The presence of the carrier molecules 803 in the cleaning solution 701may help to reduce the amount of the second inhibitor used in thecleaning solution 701. For example, when the carrier molecules 803 areincluded in the cleaning solution 701, the second inhibitor may compriseabout 1 percent by weight or less than about 1 percent by weight of theCMP cleaning solution 701. These embodiments are not intended to belimited to these inhibitors, as any suitable inhibitor different fromthe first inhibitor may be utilized as the second inhibitor.

The second surfactant may be utilized to help disperse the chelatormolecules 805, the carrier molecules 803, and the second inhibitorwithin the CMP cleaning solution 701 and also prevent the components ofthe CMP cleaning solution 701 from agglomerating during the cleaningprocess. In an embodiment, the second surfactant may include sodiumsalts of polyacrylic acid, potassium oleate, sulfosuccinates,sulfosuccinate derivatives, sulfonated amines, sulfonated amides,sulfates of alcohols, alkylanyl sulfonates, carboxylated alcohols,alkylamino propionic acids, alkyliminodipropionic acids, potassiumoleate, sulfosuccinates, sulfosuccinate derivatives, sulfates ofalcohols, alkylanyl sulfonates, carboxylated alcohols, sulfonatedamines, sulfonated amides, alkylamino propionic acids,alkyliminodipropionic acids, combinations of these, or the like. Thesecond surfactant may comprise about 2 percent by weight or less thanabout 2 percent by weight of the CMP cleaning solution 701. Theseembodiments are not intended to be limited to these surfactants, as anysuitable surfactant may be utilized as the second surfactant.

The remainder of the CMP cleaning solution 701 may be a second solventthat may be utilized to combine the chelator molecules 805, the carriermolecules 803, the second inhibitor, and the second surfactant and allowthe mixture to be moved and dispersed onto the surface of the substrate101. In an embodiment, the second solvent may be a solvent such asdeionized water or an alcohol. However, any other suitable solvent maybe utilized.

Following the cleaning process, the CMP cleaning solution 701 may beremoved from the top surface of the substrate 101. For example, the CMPcleaning solution 701 may be removed from the top surface of thesubstrate 101 by discontinuing the application of the CMP cleaningsolution 701 while the continuing to rotate the substrate 101.

FIGS. 8A-8D (although not to scale) illustrate enlarged views of thecleaning process utilizing the CMP cleaning solution 701. FIG. 8Aillustrates the surface of the first contact 401 following thedeposition of the CMP cleaning solution 701. As shown in FIG. 8A, thesurface of the first contact 401 comprises inhibitor molecules 615bonded or otherwise attached to conductive material atoms 613, which, inturn, are bonded to the bulk conductive material 611. The CMP cleaningsolution 701 comprises carrier molecules 803 and chelator molecules 805.In some embodiments, the carrier molecules 803 may be referred to ashosts.

FIG. 8B illustrates one of the chelator molecules 805 attacking one ofthe conductive material atoms 613. Each of the chelator molecules 805may attack one of the conductive material atoms 613 to remove theconductive material atom 613 and one of the inhibitor molecules 615attached to the conductive material atom 613 from the bulk conductivematerial 611. The chelator molecules 805 may remove all of theconductive material atoms 613 or at least some of the conductivematerial atoms 613 from the bulk conductive material 611. According toat least one embodiment, the chelator molecules 805 may remove aone-atom thick layer of the conductive material atoms 613 from the bulkconductive material 611 such that the surface of the bulk conductivematerial 611 is free of the inhibitor molecules 615. The chelatormolecules 805 may remove the conductive material atoms 613 and theinhibitor molecules 615 from the surface of the bulk conductive material611 by bonding with, binding, or otherwise attaching to the conductivematerial atoms 613.

FIG. 8C illustrates one of the inhibitor molecules 615 bonded to one ofthe carrier molecules 803 and one of the conductive material atoms 613bonded to one of the chelator molecules 805. After the conductivematerial atoms 613 and the inhibitor molecules 615 are removed from thebulk conductive material 611, the chelator molecules 805 may bond to theconductive material atoms 613 to form a plurality of chelator complexes809. The inhibitor molecules 615, now free from the conductive materialatoms 613, may be encapsulated by, bonded to, physically adsorbed by orotherwise attached to the interior cavity of the carrier molecules 803to form a plurality of host-guest complexes 807. More specifically, theinhibitor molecules 615 may be hydrophobic, the interior cavity of thecarrier molecules 803 may be hydrophobic, and the inhibitor molecules615 may bind to, be encapsulated by, or be physically adsorbed onto theinterior cavity of the carrier molecules 803.

FIG. 8D illustrates the host-guest complexes 807 and the chelatorcomplexes 809 in the CMP cleaning solution 701 after all of theconductive material atoms 613 have been removed from the surface of thebulk conductive material 611. As shown in FIG. 8D, the inhibitormolecules 615 may be removed from the surface of the bulk conductivematerial and encapsulated by the carrier molecules 803 to form thehost-guest complexes 807. The conductive material atoms 613 may bebonded to the chelator molecules 805 to form the chelator complexes 809.

Once the cleaning process is complete, the CMP cleaning solution 701 maybe removed from the top surface of the substrate 101. For example, in anembodiment in which the CMP cleaning solution 701 is applied using aspin-on process, the CMP cleaning solution 701 may be removed from thetop surface of the substrate 101 by discontinuing the application of theCMP cleaning solution 701 while the continuing to rotate the substrate101.

In comparison with conventional cleaning processes, cleaning the surfaceof the substrate 101 with the CMP cleaning solution 701 including thecarrier molecules 803 prevents metal corrosion and recessing of thefirst contact 401 by preventing the inhibitor molecules 615 fromre-bonding or otherwise re-attaching to the surface of the first contact401. The presence of the carrier molecules 803 in the CMP cleaningsolution 701 may also help to reduce the amount of the second inhibitorincluded in the CMP cleaning solution. The second inhibitor used inconventional cleaning processes may comprise toxic amines. Because thecarrier molecules 803 are derived from natural products and arebiocompatible, the use of the carrier molecules 803 in the CMP cleaningsolution 701 may reduce the amount of toxic amines used in the cleaningprocess according to the embodiments. Moreover, the carrier molecules803 are derived from natural products and are biocompatible. Thus, theuse of the CMP cleaning solution 701 including the carrier molecules 803reduces the amount of toxic amines used in conventional cleaningprocesses.

FIG. 9 illustrates an application of a rinsing liquid 901 on the topsurface of the substrate 101. The rinsing liquid 901 may be used in arinsing process to rinse the surface of the substrate 101. Morespecifically, the rinsing liquid 901 may be used to rinse any CMPcleaning solution 701, including inhibitor molecules 615 and conductivematerial atoms 613 dissolved therein, from the surface of the substrate101. The rinsing liquid 901 may comprise deionized (DI) water, alcohol,combinations thereof, or the like.

The rinsing liquid 901 may be applied to the top surface of thesubstrate 101. More specifically, the rinsing liquid 901 may be appliedon the top surfaces of the first contact 401, the first spacers 113, andthe capping layer 221. The rinsing liquid 901 may be applied through anozzle in a spin-on process; although any suitable application, such asthrough a brush, a sponge, a pencil brush, combinations of these, or thelike may be utilized. The rinsing liquid 901 may be applied continuouslythroughout the rinsing process, or may be applied intermittently. Thecleaning process may be performed at a temperature of between about 10°C. and about 35° C., such as about 25° C. The rinsing process may becontinuous or intermittent, and may continue for about 30 seconds, about60 seconds, less than a minute, or any other time.

Following the rinsing process, the rinsing liquid 901 may be removedfrom the top surface of the substrate 101. For example, in an embodimentin which the rinsing liquid 901 is applied using a spin-on process, therinsing liquid 901 may be removed from the top surface of the substrate101 by discontinuing the application of the rinsing liquid 901 while thecontinuing to rotate the substrate 101.

FIG. 10 illustrates an application of a drying liquid 1001 on the topsurface of the substrate 101. The drying liquid 1001 may be used in adrying process to dry the surface of the substrate 101. Morespecifically, the drying liquid 1001 may be used to dry any rinsingliquid 901 from the surface of the substrate 101. The drying liquid 1001may comprise an alcohol, such as isopropyl alcohol (IPA) or the like.

The drying liquid 1001 may be applied to the top surface of thesubstrate 101. More specifically, the drying liquid 1001 may be appliedon the top surfaces of the first contact 401, the first spacers 113, andthe capping layer 221. The drying liquid 1001 may be applied through anozzle in a spin-on process; although any suitable application, such asthrough a brush, a sponge, a pencil brush, combinations of these, or thelike may be utilized. The drying liquid 1001 may be applied continuouslythroughout the drying process, or may be applied intermittently. Thedrying process may be performed at a temperature of between about 15° C.and about 40° C., such as about 25° C. The drying process may becontinuous or intermittent, and may continue for about 30 seconds, about60 seconds, less than a minute, or any other time.

Following the drying process, the drying liquid 1001 may be removed fromthe top surface of the substrate 101. For example, in an embodiment inwhich the drying liquid 1001 is applied using a spin-on process, thedrying liquid 1001 may be removed from the top surface of the substrate101 by discontinuing the application of the drying liquid 1001 while thecontinuing to rotate the substrate 101. The drying liquid 1001 mayevaporate or boil from the surface of the substrate 101.

FIG. 11 illustrates a flow diagram of a method of cleaning the surfaceof a substrate 101. The substrate 101 may comprise a semiconductordevice 100. The semiconductor device 100 may be a FinFET, a planar FET,a horizontal gate-all-around (HGAA) FET, a vertical gate-all-around(VGAA) FET, or any other device. In step 1102, the surface of thesubstrate 101 undergoes a chemical mechanical polishing (CMP) process600. The CMP process 600 removes excess conductive material formed onthe top surface of the substrate 101 and planarizes the top surface ofthe substrate 101.

In step 1104, a CMP cleaning solution 701 is dispensed over the topsurface of the substrate 101 while the top surface of the substrate 101is scrubbed with a scrubber and the substrate 101 is rotated. The CMPcleaning solution 701 may be dispensed through a nozzle in a spin-onprocess; although any suitable application, such as through a brush, asponge, a pencil brush, combinations thereof, or the like may beutilized. The scrubber may be a brush, a sponge, a pencil brush,combinations thereof, or the like. The CMP cleaning solution 701 may bedispensed through the scrubber. The processes of step 1104 may becontinuous or intermittent and may continue for about 30 seconds, 60seconds, less than a minute, or any other time.

In step 1106, the surface of the substrate 101 is rinsed with a rinsingliquid 901 to remove the CMP cleaning solution 701 from the surface ofthe substrate 101. In step 1108, the surface of the substrate 101 isdried with a drying liquid 1001 to remove any remaining CMP cleaningsolution 701 and rinsing liquid 901 from the surface of the substrate101.

The foregoing broadly outlines some aspects of embodiments describedherein. Some embodiments described herein are described in the contextof performing a chemical mechanical polishing (CMP) process on a firstcontact 401 in a fin field-effect transistor (FinFET). However,implementations of aspects of the present disclosure may be used inother processes, in other devices, and/or for other layers. For example,other example devices can include planar FETs, horizontalgate-all-around (HGAA) FETs, vertical gate-all-around (VGAA) FETs, andother devices. The methods and cleaning solutions described above may beused to planarize other dielectric layers, other contacts (e.g., a gatecontact, a source contact, or the like), metal vias, metal lines, or anyother layers in semiconductor devices. A person having ordinary skill inthe art will readily understand other modifications that may be made,which are contemplated within the scope of other embodiments. Althoughmethod embodiments may be described in a particular order, various othermethod embodiments may be performed in any logical order and may includefewer or more steps than what is described.

In an embodiment, a method for cleaning a semiconductor device includespolishing a material from a first surface of the semiconductor deviceand cleaning the first surface with a cleaning solution. The cleaningsolution includes a host having at least one ring. The host has ahydrophilic exterior and a hydrophobic interior. In an embodiment,cleaning the first surface further includes scrubbing the first surfacewith a scrubber selected from the group consisting of a brush, a sponge,and a pencil brush. In an embodiment, cleaning the first surface furtherincludes rotating the semiconductor device. In an embodiment, the methodfurther includes rinsing the first surface with deionized water. In anembodiment, the method further includes drying the first surface withisopropyl alcohol. In an embodiment, the host forms a host-guest complexwith a CMP inhibitor disposed on the first surface of the semiconductordevice. In an embodiment, the host includes cyclodextrin.

In accordance with another embodiment, a method for manufacturing asemiconductor device includes bonding an inhibitor to a conductivematerial atom disposed on the surface of the semiconductor device,reacting a chelator molecule with the conductive material atom to removethe inhibitor from the surface of the semiconductor device, andencapsulating the inhibitor with an encapsulant. In an embodiment, theencapsulant prevents the inhibitor from being re-deposited on thesurface of the semiconductor device. In an embodiment, the conductivematerial atom comprises cobalt. In an embodiment, the encapsulantcomprises cyclodextrin. In an embodiment, the method further includesrinsing the surface of the semiconductor device with a rinsing liquid.In an embodiment, the method further includes drying the surface of thesemiconductor device with a drying liquid. In an embodiment, the rinsingliquid comprises water. In an embodiment, the drying liquid comprisesisopropyl alcohol.

In accordance with yet another embodiment, a chemical mechanicalpolishing cleaning solution includes a chelator and a plurality ofcarrier molecules. The plurality of carrier molecules includesring-shaped molecules having a hydrophilic exterior and a hydrophobicinterior. In an embodiment, the plurality of carrier molecules includescyclodextrin. In an embodiment, the plurality of carrier molecules isselected from the group consisting of α-cyclodextrin, β-cyclodextrin,and γ-cyclodextrin. In an embodiment, the plurality of carrier moleculesis present in an amount of less than 1 percent by weight of thesolution. In an embodiment, the chelator is present in the amount ofless than 2 percent by weight of the solution.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of manufacturing a semiconductor device,the method comprising: performing a chemical mechanical polishing (CMP)process to form a first planar surface, the first planar surfacecomprising a conductive contact, an interlayer dielectric layersurrounding the conductive contact, a capping layer, and gate spacers onsidewalls of the capping layer, wherein an inhibitor is bonded to aconductive material of the conductive contact disposed at the firstplanar surface after performing the CMP process, and wherein theinhibitor comprises a sulfuric ester; reacting a chelator molecule withthe conductive material to remove the inhibitor and no more than aone-atom thick layer of the conductive material from the first planarsurface; and encapsulating the inhibitor with an encapsulant, theencapsulant comprising a cucurbituril.
 2. The method of claim 1, whereinthe conductive material comprises cobalt.
 3. The method of claim 1,wherein the inhibitor comprises a hydrophobic molecule.
 4. The method ofclaim 1, further comprising bonding a second inhibitor to the inhibitor.5. The method of claim 4, wherein the second inhibitor comprisespyridine.
 6. The method of claim 4, wherein the second inhibitorcomprises an aniline molecule and wherein a benzene ring of the anilinemolecule connects to no more than one functional group.
 7. A method ofmanufacturing a semiconductor device, the method comprising: bonding afirst inhibitor to a conductive material disposed on a surface of thesemiconductor device; reacting a chelator molecule with the conductivematerial to remove the first inhibitor and a one-atom thick layer ofconductive material atoms from a bulk conductive material at a surfaceof the conductive material, wherein the chelator molecule comprisesaspartic acid; bonding the first inhibitor with a second inhibitor,wherein the second inhibitor comprises an aniline molecule, and whereineach carbon atom of the aniline molecule is bonded to another carbonatom, a hydrogen atom, or a nitrogen atom; and encapsulating the firstinhibitor with an encapsulant.
 8. The method of claim 7, wherein theencapsulant prevents the first inhibitor from being re-deposited on thesurface of the semiconductor device.
 9. The method of claim 8, whereinthe conductive material comprises cobalt.
 10. The method of claim 9,wherein the encapsulant comprises cyclodextrin.
 11. The method of claim10, further comprising rinsing the surface of the semiconductor devicewith a rinsing liquid.
 12. The method of claim 11, further comprisingdrying the surface of the semiconductor device with a drying liquid. 13.The method of claim 12, wherein the rinsing liquid comprises water. 14.The method of claim 13, wherein the drying liquid comprises isopropylalcohol.
 15. A method of manufacturing a semiconductor device, themethod comprising: performing a chemical mechanical polishing (CMP)process to form a first planar surface, wherein an inhibitor is bondedto the first planar surface after performing the CMP process; dispensinga chemical mechanical polishing cleaning solution on the first planarsurface, wherein the chemical mechanical polishing cleaning solutioncomprises: a chelator molecule; and a plurality of carrier moleculescomprising ring-shaped molecules having a hydrophilic exterior and ahydrophobic interior, the plurality of carrier molecules comprising acombination of α-cyclodextrin, β-cyclodextrin, and γ-cyclodextrin,wherein relative concentrations of α-cyclodextrin, β-cyclodextrin, andγ-cyclodextrin included in the plurality of carrier molecules areselected depending on a size of the inhibitor; reacting the chelatormolecule with the first planar surface to remove the inhibitor; andencapsulating the inhibitor with the carrier molecules.
 16. The methodof claim 15, wherein the plurality of carrier molecules is present in anamount of less than 1 percent by weight of the chemical mechanicalpolishing cleaning solution.
 17. The method of claim 16, wherein thechelator molecule is present in the amount of less than 2 percent byweight of the chemical mechanical polishing cleaning solution.
 18. Themethod of claim 15, wherein the chelator molecule comprises histidine.19. The method of claim 15, wherein the chemical mechanical polishingcleaning solution further comprises a second inhibitor, wherein thesecond inhibitor comprises benzotriazole.
 20. The method of claim 15,wherein the chemical mechanical polishing cleaning solution furthercomprises a second inhibitor, wherein the second inhibitor comprisesaniline molecules, and wherein each carbon atom of the aniline moleculesis bonded to another carbon atom, a hydrogen atom, or a nitrogen atom.